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| 7MBR10SC120 PIM/Built-in converter with thyristor and brake (S series) 1200V / 10A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit IGBT Modules Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Inverter Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) PC VRRM VDRM VRRM IT(AV) ITSM Tjw VRRM IO IFSM I2t Tj Tstg Viso Condition Continuous 1ms Collector current Tc=25C Tc=80C Tc=25C Tc=80C Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 device Continuous 1ms 1 device Tc=25C Tc=80C Tc=25C Tc=80C 50Hz/60Hz sine wave Tj=125C, 10ms half sine wave 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute Rating 1200 20 15 10 30 20 10 75 1200 20 15 10 30 20 75 1200 1600 1600 10 145 125 1600 10 105 55 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m *1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. Converter Thyristor IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR10SC120 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT VGT VTM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=10mA VGE=15V, Ic=10A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=10A VGE=15V RG=120 IF=10A chip terminal IF=10A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=10A, VGE=15V chip terminal VCC=600V IC=10A VGE=15V RG=120 VR=1200V VDM=1600V VRM=1600V VD=6V, IT=1A VD=6V, IT=1A ITM=10A chip terminal IF=10A chip terminal VR=1600V T=25C T=100C T=25/50C Characteristics Typ. Max. 50 200 5.5 7.2 8.5 2.1 2.15 2.6 1200 0.35 0.25 0.45 0.08 2.3 2.35 1.2 0.6 1.0 0.3 3.2 350 50 200 2.6 1.2 0.6 1.0 0.3 50 1.0 1.0 100 2.5 1.0 Unit A nA V V pF s Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage V ns A nA V s Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage 2.1 2.2 0.35 0.25 0.45 0.08 Brake Thyristor Converter 0.92 0.95 1.1 1.2 5000 495 3375 A mA mA mA V V V Thermistor Reverse current Resistance B value 1.5 50 520 3450 A K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 1.67 2.78 1.67 1.00 1.85 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) 7MBR10SC120 25 25 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) VGE= 20V 15V 12V 20 20 VGE= 20V 15V 12V Collector current : Ic [ A ] 15 10V 10 Collector current : Ic [ A ] 15 10V 10 5 5 8V 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 25 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) Tj= 25C 20 Tj= 125C 15 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 10 4 Ic= 20A 2 Ic= 10A Ic= 5A 5 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 5000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=10A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 1000 Cies 600 15 500 400 10 200 5 100 Coes Cres 50 0 5 10 15 20 25 30 35 0 0 20 40 60 80 0 100 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module 7MBR10SC120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=120, Tj= 25C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=120, Tj= 125C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 5 10 15 20 50 0 5 10 15 20 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=10A, VGE=15V, Tj= 25C 5000 ton 3 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=120 Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff Switching time : ton, tr, toff, tf [ nsec ] Eon(125C) tr 1000 2 Eon(25C) 500 Eoff(125C) 1 Eoff(25C) Err(125C) 100 tf Err(25C) 50 50 100 500 1000 2000 0 0 5 10 15 20 Gate resistance : Rg [ ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=10A, VGE=15V, Tj= 125C 8 120 Collector current : Ic [ A ] [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=120, Tj<=125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 6 100 Collector current : Ic [ A ] 80 SCSOA (non-repetitive pulse) 4 60 40 2 Eoff 20 RBSOA (Repetitive pulse) Err 0 50 100 500 1000 2000 0 0 200 400 600 800 1000 1200 1400 Gate resistance : Rg [ ] Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR10SC120 [ Inverter ] Forward current vs. Forward on voltage (typ.) 25 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=120 Tj=125C 20 Tj=25C 100 trr(125C) Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr(25C) Forward current : IF [ A ] 15 10 10 Irr(125C) Irr(25C) 5 0 0 1 2 3 4 1 0 5 10 15 20 Forward on voltage : VF [ V ] Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 25 100 [ Thyristor ] On-state current vs. On-state voltage (typ.) Tj= 25C 20 Tj= 125C Instantaneous on-state current [ A ] Forward current : IF [ A ] Tjw= 125C Tjw= 25C 15 10 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Instantaneous on-state voltage [ V ] Transient thermal resistance 10 200 100 [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ C/W ] FWD[Inverter] Conv. Diode IGBT [Inverter&Brake] Thyristor Resistance : R [ k ] 10 1 1 0.1 0.05 0.001 0.01 0.1 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [ C ] IGBT Module 7MBR10SC120 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) 25 25 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) VGE= 20V 15V 12V 20 20 VGE= 20V 15V 12V Collector current : Ic [ A ] 15 10V 10 Collector current : Ic [ A ] 15 10V 10 5 5 8V 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 25 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) Tj= 25C 20 Tj= 125C 15 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 10 4 Ic= 20A 2 Ic= 10A Ic= 5A 5 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 5000 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=10A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 1000 Cies 600 15 500 400 10 200 5 100 Coes Cres 50 0 5 10 15 20 25 30 35 0 0 20 40 60 80 0 100 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module Outline Drawings, mm 7MBR10SC120 Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] 21 (P) [ Thyristor ] 26 [ Brake ] 22(P1) [ Inverter ] [ Thermistor ] 8 25 20 (Gu) 18 (Gv ) 16 (Gw) 9 1(R) 2(S) 3(T) 19(Eu) 7(B) 17(Ev ) 4(U) 15(Ew) 5(V) 6(W) 14(Gb) 23(N) 24(N1) 13(Gx) 12(Gy ) 11(Gz) 10(En) |
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